Influence of source/drain electrodes on external quantum efficiency of ambipolar organic light-emitting transistors
Identifieur interne : 000091 ( Main/Repository ); précédent : 000090; suivant : 000092Influence of source/drain electrodes on external quantum efficiency of ambipolar organic light-emitting transistors
Auteurs : RBID : Pascal:14-0045710Descripteurs français
- Pascal (Inist)
- Drain, Rendement quantique, Diffusion ambipolaire, Dispositif électroluminescent, Electronique organique, Transistor effet champ, Propriété électrique, Caractéristique électrique, Addition étain, Couche ITO, Lutte antipollution air, Exciton, Trempe, Injection porteur charge, Dispositif luminescent, Diode électroluminescente, Fluorène dérivé polymère, Film polymère, Oxyde d'indium, Interface, Matériau dopé, 8530T, 7135, 8560J, ITO.
English descriptors
- KwdEn :
- Air pollution control, Ambipolar diffusion, Charge carrier injection, Doped materials, Drain, Electrical characteristic, Electrical properties, Electroluminescent device, Exciton, Field effect transistor, Fluorene derivative polymer, ITO layers, Indium oxide, Interface, Light emitting device, Light emitting diode, Organic electronics, Polymer films, Quantum yield, Quenching, Tin addition.
Abstract
The influence of source/drain (S/D) electrodes on the external quantum efficiency (EQE) of ambipolar organic light-emitting transistors (OLETs) based on fluorene-type polymer films is investigated. The electrical properties and the maximum EQE value of the device with indium tin oxide (ITO) S/D electrodes are almost the same as those of the device with Ag S/D electrodes. A relatively high EQE of 1% is achieved regardless of the emission site for the OLET with ITO. In contrast, the EQE of the OLET with Ag is low when the emission occurs close to the S/D electrodes. The maximum EQE of the device with Ag is obtained when the emission is observed in the middle of the channel. It is found that the exciton quenching by Ag electrodes significantly influences the low EQE of the OLET with Ag electrodes. The achievement of high EQE regardless of the emission site is attributable to both better carrier injection and lower exciton quenching at the interface of S/D electrodes for the OLET with ITO.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of source/drain electrodes on external quantum efficiency of ambipolar organic light-emitting transistors</title><author><name sortKey="Ikezoe, Ikuya" uniqKey="Ikezoe I">Ikuya Ikezoe</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Graduate School of Engineering, Osaka University. 2-1 Yamada-oka</s1><s2>Suita, Osaka 565-0871</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Suita, Osaka 565-0871</wicri:noRegion></affiliation></author><author><name sortKey="Tanaka, Hitoshi" uniqKey="Tanaka H">Hitoshi Tanaka</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Graduate School of Engineering, Osaka University. 2-1 Yamada-oka</s1><s2>Suita, Osaka 565-0871</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Suita, Osaka 565-0871</wicri:noRegion></affiliation></author><author><name sortKey="Hiraoka, Koichi" uniqKey="Hiraoka K">Koichi Hiraoka</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Graduate School of Engineering, Osaka University. 2-1 Yamada-oka</s1><s2>Suita, Osaka 565-0871</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Suita, Osaka 565-0871</wicri:noRegion></affiliation></author><author><name sortKey="Kajii, Hirotake" uniqKey="Kajii H">Hirotake Kajii</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Graduate School of Engineering, Osaka University. 2-1 Yamada-oka</s1><s2>Suita, Osaka 565-0871</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Suita, Osaka 565-0871</wicri:noRegion></affiliation></author><author><name sortKey="Ohmori, Yutaka" uniqKey="Ohmori Y">Yutaka Ohmori</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Graduate School of Engineering, Osaka University. 2-1 Yamada-oka</s1><s2>Suita, Osaka 565-0871</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Suita, Osaka 565-0871</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0045710</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0045710 INIST</idno><idno type="RBID">Pascal:14-0045710</idno><idno type="wicri:Area/Main/Corpus">000180</idno><idno type="wicri:Area/Main/Repository">000091</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Air pollution control</term><term>Ambipolar diffusion</term><term>Charge carrier injection</term><term>Doped materials</term><term>Drain</term><term>Electrical characteristic</term><term>Electrical properties</term><term>Electroluminescent device</term><term>Exciton</term><term>Field effect transistor</term><term>Fluorene derivative polymer</term><term>ITO layers</term><term>Indium oxide</term><term>Interface</term><term>Light emitting device</term><term>Light emitting diode</term><term>Organic electronics</term><term>Polymer films</term><term>Quantum yield</term><term>Quenching</term><term>Tin addition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Drain</term><term>Rendement quantique</term><term>Diffusion ambipolaire</term><term>Dispositif électroluminescent</term><term>Electronique organique</term><term>Transistor effet champ</term><term>Propriété électrique</term><term>Caractéristique électrique</term><term>Addition étain</term><term>Couche ITO</term><term>Lutte antipollution air</term><term>Exciton</term><term>Trempe</term><term>Injection porteur charge</term><term>Dispositif luminescent</term><term>Diode électroluminescente</term><term>Fluorène dérivé polymère</term><term>Film polymère</term><term>Oxyde d'indium</term><term>Interface</term><term>Matériau dopé</term><term>8530T</term><term>7135</term><term>8560J</term><term>ITO</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The influence of source/drain (S/D) electrodes on the external quantum efficiency (EQE) of ambipolar organic light-emitting transistors (OLETs) based on fluorene-type polymer films is investigated. The electrical properties and the maximum EQE value of the device with indium tin oxide (ITO) S/D electrodes are almost the same as those of the device with Ag S/D electrodes. A relatively high EQE of 1% is achieved regardless of the emission site for the OLET with ITO. In contrast, the EQE of the OLET with Ag is low when the emission occurs close to the S/D electrodes. The maximum EQE of the device with Ag is obtained when the emission is observed in the middle of the channel. It is found that the exciton quenching by Ag electrodes significantly influences the low EQE of the OLET with Ag electrodes. The achievement of high EQE regardless of the emission site is attributable to both better carrier injection and lower exciton quenching at the interface of S/D electrodes for the OLET with ITO.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>15</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of source/drain electrodes on external quantum efficiency of ambipolar organic light-emitting transistors</s1></fA08><fA11 i1="01" i2="1"><s1>IKEZOE (Ikuya)</s1></fA11><fA11 i1="02" i2="1"><s1>TANAKA (Hitoshi)</s1></fA11><fA11 i1="03" i2="1"><s1>HIRAOKA (Koichi)</s1></fA11><fA11 i1="04" i2="1"><s1>KAJII (Hirotake)</s1></fA11><fA11 i1="05" i2="1"><s1>OHMORI (Yutaka)</s1></fA11><fA14 i1="01"><s1>Graduate School of Engineering, Osaka University. 2-1 Yamada-oka</s1><s2>Suita, Osaka 565-0871</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>105-110</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000501664880150</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>32 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0045710</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The influence of source/drain (S/D) electrodes on the external quantum efficiency (EQE) of ambipolar organic light-emitting transistors (OLETs) based on fluorene-type polymer films is investigated. The electrical properties and the maximum EQE value of the device with indium tin oxide (ITO) S/D electrodes are almost the same as those of the device with Ag S/D electrodes. A relatively high EQE of 1% is achieved regardless of the emission site for the OLET with ITO. In contrast, the EQE of the OLET with Ag is low when the emission occurs close to the S/D electrodes. The maximum EQE of the device with Ag is obtained when the emission is observed in the middle of the channel. It is found that the exciton quenching by Ag electrodes significantly influences the low EQE of the OLET with Ag electrodes. The achievement of high EQE regardless of the emission site is attributable to both better carrier injection and lower exciton quenching at the interface of S/D electrodes for the OLET with ITO.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="03" i2="X"><s0>001D05C</s0></fC02><fC02 i1="04" i2="X"><s0>001D06D11E1</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Drain</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Drain</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Dren</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Rendement quantique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Quantum yield</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Rendimiento quántico</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Diffusion ambipolaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Ambipolar diffusion</s0><s5>03</s5></fC03><fC03 i1="03" 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